Homogenization of the Thin Dielectric Layers of Wound Components for the Computation of the Parasitic Capacitances in 2-D FE Electrostatics
Identifieur interne : 004F11 ( Main/Exploration ); précédent : 004F10; suivant : 004F12Homogenization of the Thin Dielectric Layers of Wound Components for the Computation of the Parasitic Capacitances in 2-D FE Electrostatics
Auteurs : Zacharie De Greve [Belgique] ; Olivier Deblecker [Belgique] ; Jacques Lobry [Belgique] ; Gérard Meunier [France]Source :
- IEEE transactions on magnetics [ 0018-9464 ] ; 2013.
Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
In this paper, we propose a homogenization procedure for the thin insulation layers that surround the conductors of wounded magnetic components. The dielectrics are replaced by a homogeneous medium with an equivalent permittivity, previously computed by solving two electrostatic problems on the cell scale, using the finite element method (FEM). The homogenized model is compared with the fine one (i.e., for which each layer is finely discretized), in terms of accuracy and computational burden.
Affiliations:
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Le document en format XML
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<front><div type="abstract" xml:lang="en">In this paper, we propose a homogenization procedure for the thin insulation layers that surround the conductors of wounded magnetic components. The dielectrics are replaced by a homogeneous medium with an equivalent permittivity, previously computed by solving two electrostatic problems on the cell scale, using the finite element method (FEM). The homogenized model is compared with the fine one (i.e., for which each layer is finely discretized), in terms of accuracy and computational burden.</div>
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